HGTG15N120C3

Производитель-деталь №
HGTG15N120C3
Производитель
Harris Corporation
Упаковка/футляр
-
Техническое описание
HGTG15N120C3
Описание
35A, 1200V, N-CHANNEL IGBT
lang_0071
577

Запросить предложение (ЗКП)

* lang_0862:
  Компания:
* Электронная почта:
  Телефон:
  Комментарий:
lang_0872 :
Harris Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
35 A
Current - Collector Pulsed (Icm) :
120 A
Gate Charge :
100 nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power - Max :
164 W
Product Status :
Active
Reverse Recovery Time (trr) :
-
Supplier Device Package :
TO-247
Switching Energy :
-
Td (on/off) @ 25°C :
-
Test Condition :
-
Vce(on) (Max) @ Vge, Ic :
3.5V @ 15V, 15A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
lang_0258
HGTG15N120C3

Продукты, связанные с производителем

Продукты, связанные с каталогом

Сопутствующие товары

Деталь Производитель Склад Описание
HGTG10N120BND onsemi 2,165 IGBT NPT 1200V 35A TO247-3
HGTG11N120CN Fairchild Semiconductor 971 N-CHANNEL IGBT
HGTG11N120CN onsemi 35,000 IGBT 1200V 43A 298W TO247
HGTG11N120CND onsemi 366 IGBT NPT 1200V 43A TO247-3
HGTG12N60A4 Fairchild Semiconductor 35,000 N-CHANNEL IGBT
HGTG12N60A4 onsemi 35,000 IGBT 600V 54A 167W TO247
HGTG12N60A4D onsemi 35,000 IGBT 600V 54A 167W TO247
HGTG12N60B3 onsemi 35,000 IGBT 600V 27A 104W TO247
HGTG12N60C3D Harris Corporation 35,000 UFS SERIES N-CH IGBT
HGTG12N60C3D Fairchild Semiconductor 35,000 24A, 600V, UFS SERIES N-CHANNEL
HGTG12N60C3D onsemi 35,000 IGBT 600V 24A 104W TO247
HGTG12N60C3DR Harris Corporation 35,000 UFS SERIES N-CHANNEL IGBT
HGTG12N60D1D Harris Corporation 606 UFS SERIES N-CHANNEL IGBT
HGTG12N60DID Harris Corporation 15,378 24A, 600V, RUGGED, UFS SERIES N
HGTG15N1203D Harris Corporation 35,000 35A, 1200V, UFS SERIES N-CHANNEL