NXH200T120H3Q2F2SG

Производитель-деталь №
NXH200T120H3Q2F2SG
Производитель
onsemi
Упаковка/футляр
-
Техническое описание
NXH200T120H3Q2F2SG
Описание
80KW GEN-II Q2PACK-200A MODULE
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35000

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onsemi
Категория товара :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
Half Bridge
Current - Collector (Ic) (Max) :
330 A
Current - Collector Cutoff (Max) :
500 µA
IGBT Type :
Trench Field Stop
Input :
Standard
Input Capacitance (Cies) @ Vce :
35.615 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
Module
Power - Max :
679 W
Product Status :
Active
Supplier Device Package :
56-PIM/Q2PACK (93x47)
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
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NXH200T120H3Q2F2SG

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