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NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1280 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

97W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

37mOhm @ 20A, 10V

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2V @ 1mA