STI12N65M5

lang_0872 :

STMicroelectronics

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.5A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

900 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power Dissipation (Max) :

70W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

430mOhm @ 4.3A, 10V

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250µA