HAT1072H-EL-E

lang_0872 :

Intersil (Renesas Electronics Corporation)

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

155 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-100, SOT-669

Power Dissipation (Max) :

30W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 20A, 10V

Supplier Device Package :

LFPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -20V

Vgs(th) (Max) @ Id :

-