64-9145

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Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

27A (Ta), 150A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

4130 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

DirectFET™ Isometric MX

Power Dissipation (Max) :

2.8W (Ta), 89W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

2.7mOhm @ 27A, 10V

Supplier Device Package :

DIRECTFET™ MX

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.45V @ 250µA