SPD100N03S2L-04

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

89.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3320 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Power Dissipation (Max) :

150W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 50A, 10V

Supplier Device Package :

PG-TO252-5-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 100µA