IRL1104S

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

104A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

68 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

3445 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

2.4W (Ta), 167W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

8mOhm @ 62A, 10V

Supplier Device Package :

D2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250µA