APTC60DAM18CTG

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

143A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1036 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

28000 pF @ 25 V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP4

Power Dissipation (Max) :

833W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

18mOhm @ 71.5A, 10V

Supplier Device Package :

SP4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.9V @ 4mA