NTC020N120SC1

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

103A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

203 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

2890 pF @ 800 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

Die

Power Dissipation (Max) :

535W (Tc)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

28mOhm @ 60A, 20V

Supplier Device Package :

Die

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -15V

Vgs(th) (Max) @ Id :

4.3V @ 20mA