RTE002P02TL

Производитель-деталь №
RTE002P02TL
Производитель
ROHM Semiconductor
Упаковка/футляр
-
Техническое описание
RTE002P02TL
Описание
MOSFET P-CH 20V 200MA EMT3
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35000

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ROHM Semiconductor
Категория товара :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
50 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-75, SOT-416
Power Dissipation (Max) :
150mW (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 200mA, 4.5V
Supplier Device Package :
EMT3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±12V
Vgs(th) (Max) @ Id :
2V @ 1mA
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RTE002P02TL

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