PH3120L,115-NXP

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

4457 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-100, SOT-669

Power Dissipation (Max) :

62.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.65mOhm @ 25A, 10V

Supplier Device Package :

LFPAK56, Power-SO8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA