GA05JT03-46

lang_0872 :

GeneSiC Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

300 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 225°C (TJ)

Package / Case :

TO-46-3

Power Dissipation (Max) :

20W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

240mOhm @ 5A

Supplier Device Package :

TO-46

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-