GAN041-650WSBQ

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

47.2A

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

187W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

41mOhm @ 32A, 10V

Supplier Device Package :

TO-247-3

Technology :

GaNFET (Cascode Gallium Nitride FET)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 1mA