PHB29N08T,118

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

27A (Tc)

Drain to Source Voltage (Vdss) :

75 V

Drive Voltage (Max Rds On, Min Rds On) :

11V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

810 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

88W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

50mOhm @ 14A, 11V

Supplier Device Package :

D2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 2mA