TK10A80E,S4X

Производитель-деталь №
TK10A80E,S4X
Производитель
Toshiba Electronic Devices and Storage Corporation
Упаковка/футляр
-
Техническое описание
TK10A80E,S4X
Описание
MOSFET N-CH 800V 10A TO220SIS
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Toshiba Electronic Devices and Storage Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drain to Source Voltage (Vdss) :
800 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2000 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Power Dissipation (Max) :
50W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1Ohm @ 5A, 10V
Supplier Device Package :
TO-220SIS
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 1mA
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TK10A80E,S4X

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