TK100L60W,VQ

lang_0872 :

Toshiba Electronic Devices and Storage Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

360 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

15000 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3PL

Power Dissipation (Max) :

797W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

18mOhm @ 50A, 10V

Supplier Device Package :

TO-3P(L)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 5mA