GPI65010DF56

lang_0872 :

GaNPower

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

6V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.6 nC @ 6 V

Input Capacitance (Ciss) (Max) @ Vds :

90 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

Die

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

Die

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

+7.5V, -12V

Vgs(th) (Max) @ Id :

1.4V @ 3.5mA