RFB18N10CS

lang_0872 :

Harris Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

Current Sensing

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-5

Power Dissipation (Max) :

79W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

100mOhm @ 9A, 10V

Supplier Device Package :

TO-220AB-5

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA