NVMS5P02R2G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.95A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 16 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

33mOhm @ 5.4A, 4.5V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

1.25V @ 250µA