UJ3C065080B3

lang_0872 :

UnitedSiC

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

25A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

51 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

115W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

111mOhm @ 20A, 12V

Supplier Device Package :

TO-263 (D2Pak)

Technology :

-

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

6V @ 10mA