IPD30N03S4L09ATMA1
- Производитель-деталь №
- IPD30N03S4L09ATMA1
- Производитель
- Infineon Technologies
- Упаковка/футляр
- -
- Техническое описание
- IPD30N03S4L09ATMA1
- Описание
- MOSFET N-CH 30V 30A TO252-3
- lang_0071
- 36776
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- Infineon Technologies
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 42W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 30A, 10V
- Supplier Device Package :
- PG-TO252-3-11
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 13µA
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- IPD30N03S4L09ATMA1
Продукты, связанные с производителем
Продукты, связанные с каталогом
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