MSCSM120AM027CT6AG

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

733A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N Channel (Phase Leg)

Gate Charge (Qg) (Max) @ Vgs :

2088nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

27000pF @1000V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

2.97kW (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 360A, 20V

Supplier Device Package :

SP6C

Vgs(th) (Max) @ Id :

2.8V @ 9mA