GE12047BCA3

lang_0872 :

General Electric

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

475A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 Independent

Gate Charge (Qg) (Max) @ Vgs :

1248nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

29300pF @ 600V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 150°C (Tc)

Package / Case :

Module

Power - Max :

1250W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.4mOhm @ 475A, 20V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

4.5V @ 160mA