CAB425M12XM3

lang_0872 :

Wolfspeed

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

450A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

1135nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

30.7nF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

50mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 425A, 15V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

3.6V @ 115mA