MSCM20XM10T3XG

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

108A (Tc)

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

161nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

10700pF @ 50V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 125°C (Tc)

Package / Case :

Module

Power - Max :

341W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.7mOhm @ 81A, 10V

Supplier Device Package :

SP3X

Vgs(th) (Max) @ Id :

5V @ 250µA