UNR222200L

lang_0872 :

Panasonic

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA, 10V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Obsolete

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

Mini3-G1

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V