PDTC114EMB,315
- Производитель-деталь №
- PDTC114EMB,315
- Производитель
- NXP Semiconductors
- Упаковка/футляр
- -
- Техническое описание
- PDTC114EMB,315
- Описание
- PDTC114EMB - UPN RESISTOR-EQUIPP
- lang_0071
- 35000
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- NXP Semiconductors
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA, 5V
- Frequency - Transition :
- 230 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-101, SOT-883
- Power - Max :
- 250 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 10 kOhms
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Supplier Device Package :
- DFN1006B-3
- Transistor Type :
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
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- PDTC114EMB,315
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PDTC114EM,315 | Philips | 35,000 | NPN RESISTOR-EQUIPPED TRANSISTOR |
PDTC114EM,315 | Nexperia | 35,000 | TRANS PREBIAS NPN 250MW SOT883 |
PDTC114EMB,315 | Nexperia | 120,000 | NEXPERIA PDTC114EMB - UPN RESIST |
PDTC114EMB,315 | Nexperia | 35,000 | TRANS PREBIAS NPN 50V DFN1006B-3 |
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