RN2401,LF

Производитель-деталь №
RN2401,LF
Производитель
Toshiba Electronic Devices and Storage Corporation
Упаковка/футляр
-
Техническое описание
RN2401,LF
Описание
TRANS PREBIAS PNP 50V 0.1A SMINI
lang_0071
35000

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lang_0872 :
Toshiba Electronic Devices and Storage Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Frequency - Transition :
200 MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
200 mW
Product Status :
Active
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Supplier Device Package :
S-Mini
Transistor Type :
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
lang_0258
RN2401,LF

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Деталь Производитель Склад Описание
RN2401,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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RN2407,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q PNP Q1BSR=10K, Q1BER=