PDTC114EM,315

Производитель-деталь №
PDTC114EM,315
Производитель
Philips
Упаковка/футляр
-
Техническое описание
PDTC114EM,315
Описание
NPN RESISTOR-EQUIPPED TRANSISTOR
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35000

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Philips
Категория товара :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 5mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SC-101, SOT-883
Power - Max :
250 mW
Product Status :
Active
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
10 kOhms
Supplier Device Package :
DFN1006-3
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
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PDTC114EM,315

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