TSD2150ACY RMG

lang_0872 :

Taiwan Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA, 2V

Frequency - Transition :

90MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

600 mW

Product Status :

Obsolete

Supplier Device Package :

SOT-89

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

50 V