TS13002ACT A3G

lang_0872 :

Taiwan Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

300 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA, 10V

Frequency - Transition :

4MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

600 mW

Product Status :

Active

Supplier Device Package :

TO-92

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 20mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

400 V