2SC2229-O(MIT1F,M)

lang_0872 :

Toshiba Electronic Devices and Storage Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

50 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA, 5V

Frequency - Transition :

120MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

800 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92MOD

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

150 V