SPZT2907AT1G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1.5 W

Product Status :

Active

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60 V