PHE13009/DG,127

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

12 A

Current - Collector Cutoff (Max) :

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5A, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Power - Max :

80 W

Product Status :

Active

Supplier Device Package :

TO-220AB

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2V @ 1.6A, 8A

Voltage - Collector Emitter Breakdown (Max) :

400 V