SPZT651T1G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 1A, 2V

Frequency - Transition :

75MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

800 mW

Product Status :

Active

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60 V