TCS1200

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

60A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A, 5V

Frequency - Transition :

1.03GHz

Gain :

10.2dBd

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55TU-1

Power - Max :

2095W

Product Status :

Obsolete

Supplier Device Package :

55TU-1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V