0105-50

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

7A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 1A, 5V

Frequency - Transition :

100MHz ~ 500MHz

Gain :

8.5dB ~ 10dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55JT

Power - Max :

140W

Product Status :

Obsolete

Supplier Device Package :

55JT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V