MS652S

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 200mA, 5V

Frequency - Transition :

450MHz ~ 512MHz

Gain :

10dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

M123

Power - Max :

25W

Product Status :

Obsolete

Supplier Device Package :

M123

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

16V