0912-45

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

4.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA, 5V

Frequency - Transition :

960MHz ~ 1.215GHz

Gain :

8dB ~ 9dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55CT

Power - Max :

225W

Product Status :

Obsolete

Supplier Device Package :

55CT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

60V