BFP620FH7764XTSA1

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Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA, 1.5V

Frequency - Transition :

65GHz

Gain :

21dB ~ 10dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Operating Temperature :

150°C (TJ)

Package / Case :

4-SMD, Flat Leads

Power - Max :

185mW

Product Status :

Active

Supplier Device Package :

4-TSFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.8V