NTE107

lang_0872 :

NTE Electronics, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

25mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Frequency - Transition :

2.1GHz

Gain :

-

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Operating Temperature :

100°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

TO-92

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V