BFP650FH6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA, 3V

Frequency - Transition :

42GHz

Gain :

11dB ~ 21.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Operating Temperature :

150°C (TJ)

Package / Case :

4-SMD, Flat Leads

Power - Max :

500mW

Product Status :

Active

Supplier Device Package :

4-TSFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V