KSP10TA

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA, 10V

Frequency - Transition :

650MHz

Gain :

-

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

350mW

Product Status :

Active

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

25V