BCR35PNE6327BTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Package / Case :

6-VSSOP, SC-88, SOT-363

Power - Max :

250mW

Product Status :

Obsolete

Resistor - Base (R1) :

10kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

PG-SOT363-PO

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V