RN2511(TE85L,F)
- Производитель-деталь №
- RN2511(TE85L,F)
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- RN2511(TE85L,F)
- Описание
- TRANS 2PNP PREBIAS 0.3W SMV
- lang_0071
- 35000
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- Компания:
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- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74A, SOT-753
- Power - Max :
- 300mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 10kOhms
- Resistor - Emitter Base (R2) :
- -
- Supplier Device Package :
- SMV
- Transistor Type :
- 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- lang_0258
- RN2511(TE85L,F)
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| RN2502(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | TRANS 2PNP PREBIAS 0.3W SMV |
| RN2503(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 2,698 | TRANS 2PNP PREBIAS 0.3W SMV |
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| RN2507(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 1,015 | TRANS 2PNP PREBIAS 0.3W SMV |
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