NTE2018

lang_0872 :

NTE Electronics, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

600mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-20°C ~ 85°C (TA)

Power - Max :

1W

Product Status :

Active

Supplier Device Package :

18-PDIP

Transistor Type :

8 NPN Darlington

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 350mA, 500A

Voltage - Collector Emitter Breakdown (Max) :

50V