2SK879-Y(TE85L,F)

Mfr.Part #
2SK879-Y(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
2SK879-Y(TE85L,F)
Description
JFET N-CH 0.1W USM
Stock
33878

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - JFETs
Current - Drain (Idss) @ Vds (Vgs=0) :
1.2 mA @ 10 V
Current Drain (Id) - Max :
-
Drain to Source Voltage (Vdss) :
-
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8.2pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
125°C (TJ)
Package / Case :
SC-70, SOT-323
Power - Max :
100 mW
Product Status :
Active
Resistance - RDS(On) :
-
Supplier Device Package :
USM
Voltage - Breakdown (V(BR)GSS) :
-
Voltage - Cutoff (VGS off) @ Id :
400 mV @ 100 nA
Datasheets
2SK879-Y(TE85L,F)

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