GT50J121(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

50 A

Current - Collector Pulsed (Icm) :

100 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3PL

Power - Max :

240 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-3P(LH)

Switching Energy :

1.3mJ (on), 1.34mJ (off)

Td (on/off) @ 25°C :

90ns/300ns

Test Condition :

300V, 50A, 13Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

600 V