GT50JR21(STA1,E,S)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

50 A

Current - Collector Pulsed (Icm) :

100 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

230 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-3P(N)

Switching Energy :

-

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

600 V